ISSN 1817-2172, рег. Эл. № ФС77-39410, ВАК

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Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices

Автор(ы):

E. Z. Borevich

V. M. Chistyakov

Аннотация:

The paper studies mobile carrier transport in semiconductor devices with constant densities of ionized impurities. To describe this process we use one-dimensional system of partial differential equations. Under certain assumptions, we prove the global existence of solutions of systems of this type. Bifurcations and stability of solutions are also studied.

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